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Novel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices

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dc.contributor.authorDong-Ok Kim
dc.contributor.authorHyo-Ki Hong
dc.contributor.authorDong-Bum Seo
dc.contributor.authorTran Nam Trung
dc.contributor.authorChan-Cuk Hwang
dc.contributor.authorZonghoon Lee
dc.contributor.authorEui-Tae Kim
dc.date.accessioned2026-05-24T16:42:31Z
dc.date.available2026-05-24T16:42:31Z
dc.date.issued2020-01-01
dc.description.abstractNovel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices
dc.identifier.doihttps://doi.org/10.1016/j.carbon.2019.11.019
dc.identifier.isbn0008-6223
dc.identifier.urihttps://rims.qnu.edu.vn/handle/123456789/1211
dc.subjectGate dielectric
dc.subjectHydrocarbon films
dc.subjectMIS devices
dc.titleNovel high-k gate dielectric properties of ultrathin hydrocarbon films for next-generation metal-insulator-semiconductor devices
dc.typejournal article
dspace.entity.typePublication
oairecerif.author.affiliationTruong Dai hoc Quy Nhon
oairecerif.author.affiliationTruong Dai hoc Quy Nhon
oairecerif.author.affiliationTruong Dai hoc Quy Nhon
oairecerif.author.affiliationTruong Dai hoc Quy Nhon
oairecerif.author.affiliationTruong Dai hoc Quy Nhon
oairecerif.author.affiliationTruong Dai hoc Quy Nhon
oairecerif.author.affiliationTruong Dai hoc Quy Nhon

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